An201105 industrial igbt modules explanation of technical information. This is why it is desired that no stray inductance should exist in a circuit. Igbt is useful in reducing the power supply congestion which then. Clamping vge from the external terminal does not alleviate the problem because. Powering igbt gate drives with dcdc converters technical. Selection suitable igbt driver when selecting the suitable igbt driver for the individual application, the following details have to be considered. Scale igbt and mosfet gate driver product overview 20162017. It is suitable for igbts with reverse voltages up to 1700 v and also features a dedicated mosfet mode. The main cause of this is the change in load current dildt. Driving highly inductive loads destroys mosfet driver.
Thus, it is important to provide a higher impedance turnoff path when shutting the igbt off during a desaturation event in. A smart gate driver with active switching speed control. Driver igbt module 1 v ce l s l igbt module 2 b 1 b 2 d 1 d 2 v cc v a i c pg15v v g v r ps v ls i r t t e 0 0 v t g v 015 15 v cc v r v ce i c i r t 1 t 2 t 3 p i. The high side chips are placed o n these phase bars and the top optimization of the stray inductance in threephase mosfet power modules aided. I removed the mosfet and just stuck a cap on the output. Chapter 10 emc design of igbt module 108 assuming, for example, that the stray inductance of the wiring is 200nh and the stray capacitance of the substrate is 500pf, and if they are looped, the resonance frequency fo of the loop is calculated as fig.
This effect causes the fault current to rise even higher. As the igbt comes out of saturation, the fast rising dvdt coupled with the miller capacitance, adds more voltage on the internal vge. Select the most suitable gate drive conditions while paying attention to the above points of. The lowered vge level is limiting the current of the igbt during the additional level interval t tlset, the. Offering higher power density and a compact form factor, the new package enables lower quantity of. Limiting the overshoot on igbt during turnoff using stray.
While the inductance may be small, just 5 nh would produce 5 v at a didt of as which is not unusual. Ppt igbt gate driver calculation powerpoint presentation. The driver must be able to provide the necessary gate current output current output power. A theoretical peak current can be easily calculated, the igbts internal gate resistor must be taken into account and the result is in practice lower as the internal stray inductance limits this theoretical value. Application note an 7002 connection of gate drivers to igbt. Measurement of stray inductance for igbt datasheet. For example, voltage spikes during turnoff transition of the igbt are proportional to the total loop inductance. Industrial igbt modules application note an 20 explanation of technical information 4 1105 v1. Total dynamic loss consideration of the experimental results the didt in combination with the stray inductance reduces the voltage at the igbt during turnon but it enlarges the over. A smart gate driver with active switching speed control for. Gate and collector of igbt is getting short all about circuits. The lowered vge level is limiting the current of the igbt during the additional level interval t tlset, the required timing value is depending on stray inductance. Detailed model of the igbt module the 1700v 400a single switch igbt module is considered in this paper. Pdf a new method to extract stray inductance in igbts.
Microsemis sp6li product family features five standard modules, offering phase leg topology ranking from 1200 volts v, 210 amperes a to 586 a at a case temperature tc of 80 degrees celsius to 1700 v, 207 a at tc of 80 degrees celsius. A consideration also is that any emitter inductance between the igbt and the driver reference, point x in figure 1, causes an opposing gateemitter voltage. To further enhance commutation speed, an improved gdu was developed, reducing the total stray inductance from 0. Gate and collector of igbt is getting short all about. Concept ships first igbt driver cores with new spacesaving. Vce overvoltage peak at turnoff possibly exeeding bvces and hence frying the poor igbt the same inductance can resonate with stray capacitance causing vce ringing, bootstrap gate drivers like the one you are using are sometimes very sensitive to fail if highside driver emittersource. A consideration also is that any emitter inductance between the igbt and the driver reference, point x in figure 1, causes an opposing gateemitter voltage when the igbt is turning off. Feb 17, 2016 a theoretical peak current can be easily calculated, the igbts internal gate resistor must be taken into account and the result is in practice lower as the internal stray inductance limits this theoretical value. Stray inductance estimation with detailed model of the. The driver is designed for both highpower and highfrequency applications requiring maximum reliability. Parasitic inductance within the collectoremitter circuit due to wire bond and pcb trace stray inductance can result in large overvoltage levels being reached transiently across the igbt as vl stray l stray.
This document presents the measurement method of the stray inductance inclusive of the modules. An advantageous solution, even for highpower igbt modules, is to mount the gate driver onto the igbt module directly. The gate driver must be located very close to the igbt module to minimize stray inductance between gate driver and igbt module. For reference, the inductance of the ignition coil has been measured at 9. Here, flowing charge flows in such a manner that it opposes the charge flowing behind it. Powering igbt gate drives with dcdc converters paul lee director of business development, murata power solutions uk. An embedded paralleling capability allows simple inverter design at higher power ratings. I was thumbing through a power electronics book 1 and found an example where average voltage was plotted against the product of inductance and load current for a 230 vac input. Igbt gate drive calculator kaizer power electronics. The entire stray inductance in the commutation circuit is hvigbt driver includes activeclamping function matching with igbts from the leading manufacturers ctconcepts new igbt drivers are suitable for highvoltage and highcurrent igbts with reverse voltages up to 6500v. For modern vrm, the inductance in gate driving loop is typically around 10 nh to 20 nh, depending on pcb layout.
Connection of gate drivers to igbt and controller powerguru. And each part of stray impedance was obtained based on a series of experiments with 6inch gcts and two types of conventional gdus. Igbt overcurrent and shortcircuit protection in industrial. The maximum average output current of the driver must be higher than the calculated value.
Therefore, this is the reason capacitor leads must be kept short, less than 1. Insulated gate bipolar transistor igbt market global scenario, market size, outlook, trend and forecast, 20152024 the insulated gate bipolar transistor igbt is an electronic semiconductor device with large bipolar currentcarrying competence and high input impedance. Typical stray inductance including the stray inductance of the igbt power modules of the commutation loop is 30nh gate driver channels interface power module package voltage class sid1182k 2 electrical various up to 1200v this two channel application related reference design board embrace a circuit design. An advantageous solution, even for high power igbt modules, is directly mounting of the gate driver onto the igbt module. A multilayered approach for igbt module has also been presented by 5. This additional level ensures lower vce overshoots at turn off by reducing gate emitter voltage of the igbt in short circuits. And9410 methods to characterize parasitic inductance and. How to design an rg resistor for a vishay trench pt igbt. V with gate driver and temperature measurement 12 collectoremittervoltage in 100 v n package.
Biel, switzerland, mar 19, 2014 business wire igbt driver manufacturer ctconcept technologie gmbh, a power integrations company, has announced. A simplified electric model of the circuit is show in fig. Sep 02, 2019 this stray inductance can give two similar issues. A good pcb layout adds little additional parasiticsbeyond what is already inside the device. Limiting the overshoot on igbt during turnoff using stray inductance with the use of permanent magnet motors in the automotive drivetrain, the demand to finely control the current using power electronics has increased. Infineon an200601 driving igbts with unipolar gate voltage. Optimization of the stray inductance in threephase mosfet. The 2sc0106t drives 600 v to 1200 v igbts with collector currents up to 450 a and switches at frequencies up to 50 khz. Infineon an200601 driving igbts with unipolar gate. Calculate total gate inductance of driver loop by equation 1. Because of the stray inductance in the power circuit, didt.
The driver didnt switch anymore and just heated up, so i believe it to be destroyed. In total the first switching phase dominates and the diode losses increase with higher inductance from 24. In the data sheet of an igbt driver, a maximum peak current is given, as are the minimum values for the gate resistors. Application note an 7002 connection of gate drivers to. A compensation of this effect is achieved by adapting the external stray inductance or phase, sections. Thus, dynamic parameters of igbt are tested with a special dynamic testing platform, and the stray inductance of the testing platform is always specified. Turnon via stray inductances when turning off the load current a voltage t i v l d d c2. Driver igbt module 1 v ce l s l igbt module 2 b 1 b 2 d 1 d 2 v cc v a i c pg15v v g v r ps v ls i r t t e 0 0 v. The connection between the driver and igbt terminal is a secondorder circuit because it has an inductance and the gate of the igbt does not have a negligible capacitance. Induced voltage across the emitter inductance when switching the igbt t 1 on the main current will commutate from the free wheeling diode d 2 to the igbt. An201105 industrial igbt modules explanation of technical. Connection between gate driver and igbt module the gate driver must be located very close to the igbt module to minimize stray inductance between the gate driver and igbt module. Therefore, rg need to be designed on the lower stray inductance condition.
Its that phenomenon in which the current lags behind the applied voltage resulting in a phase difference. Due to the feedback effect of the emitter stray inductance. Here, the chips are placed on the bottom dbc and the three phase conductors are built on their top by applying copper bars. Reduction of stray inductance in power electronic modules. Paper open access a new method to extract stray inductance in. Igbts are turned off or fwds are recovered reversibly areinfluenced on the stray inductance. Scale igbt and mosfet gate driver product overview. Current is controlled by switching the igbt on and off at high frequencies. Stray impedance measurement and improvement of highpower. An output current of 50 a and 6 w drive power is available per channel, making the 2sc0650p a suitable driver both for highpower modules and parallelconnected igbt modules. Stray inductance in igbts dynamic testing platform has great influence on switching characteristics, such as switching speed, switching loss, voltage overshoot, and so on. While the inductance may be small, just 5 nh would produce 5 v at a didt of. The dominant stray inductance inside the package mainly comes from the terminal leads 2. Stray inductance of dynamic testing platform is a key factor that affects dynamic characteristics of igbts 56.
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